Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices

TL;DR

This paper investigates how microwave radiation modifies the Hall effect in high mobility GaAs/AlGaAs devices, revealing oscillatory behavior linked to changes in resistance under irradiation.

Contribution

It provides the first detailed characterization of radiation-induced oscillations in the Hall effect in high mobility GaAs/AlGaAs devices under microwave excitation.

Findings

Radiation causes a small reduction in the Hall resistance slope.

Hall resistance exhibits periodic reductions correlated with increased diagonal resistance.

The Hall resistance correction disappears when the diagonal resistance vanishes.

Abstract

We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance, $R_{xy}$, that correlates with an increase in the diagonal resistance, $R_{xx}$, and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes.