Electronic and optical properties of InAs(110)
X. Lopez-Lozano, Cecilia Noguez, L. Meza-Montes

TL;DR
This paper investigates the electronic and optical properties of the InAs(110) surface using a semi-empirical tight-binding method, comparing results with other theories and experiments.
Contribution
It provides a detailed analysis of the surface electronic states and optical spectra of InAs(110) using a semi-empirical tight-binding approach, offering new insights into its surface properties.
Findings
Surface electronic band structure characterized
Reflectance Anisotropy Spectrum analyzed
Comparison with experimental data discussed
Abstract
The electronic and optical properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended atomic-like basis set. We describe and discuss the electronic character of the surface electronic states and we compare with other theoretical approaches, and with experimental observations. We calculate the surface electronic band structure and the Reflectance Anisotropy Spectrum, which are described and discussed in terms of the surface electronic states and the atomic structure.
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Taxonomy
TopicsAdvanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Machine Learning in Materials Science
