Deposition of Cu2Ta4O12 by pulsed laser deposition
A. Heinrich, B. Renner, R. Lux, S. G. Ebbinghaus, A. Reller, B., Stritzker

TL;DR
This paper reports the successful deposition of Cu2Ta4O12 thin films using pulsed laser deposition, analyzing how process parameters affect film structure and morphology, with detailed characterization of the resulting films.
Contribution
It provides a detailed experimental methodology and analysis of Cu2Ta4O12 film deposition, highlighting the effects of various deposition parameters on film quality.
Findings
Crystalline structure depends on substrate temperature and oxygen pressure.
Surface morphology varies with deposition conditions.
Ta2O5 phase formation influences film growth orientation.
Abstract
Cu2Ta4O12 (CTaO) thin films were successfully deposited on Si(100) substrates by pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CTaO thin films were strongly affected by substrate temperature, oxygen pressure and target - substrate distance. In general during deposition of CTaO the formation of a Ta2O5 phase appeared, on which CTaO grew with different orientations. We report on the experimental set-up, details for film deposition and the film properties determined by SEM, EDX and XRD.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsElectronic and Structural Properties of Oxides · Copper-based nanomaterials and applications · Semiconductor materials and devices
