Hall effect in the normal state of high Tc cuprates

TL;DR

This paper presents a model explaining the temperature dependence of the Hall effect in high Tc cuprates, linking it to the electronic band structure and saddle points in the CuO2 plane, and successfully fitting experimental data across various doping levels.

Contribution

It introduces a band-structure-based model that accounts for the universal temperature dependence of the Hall coefficient in high Tc cuprates, fitting experimental results across doping levels.

Findings

The Hall coefficient decreases with temperature in a universal manner.

Carrier orbits switch from hole-like to electron-like across the saddle point energy.

The model accurately fits experimental data for various doping levels.

Abstract

We propose a model for explaining the dependence in temperature of the Hall effect of high Tc cuprates in the normal state in various materials. They all show common features: a decrease of the Hall coefficient RH with temperature and a universal law, when plotting RH(T)/RH(T0) versus T/T0, where T0 is defined from experimental results. This behaviour is explained by using the well known electronic band structure of the CuO2 plane, showing saddle points at the energies ES in the directions (0,+/-pi) and (+/-pi,0). We remark that in a magnetic field, for energies E>ES the carrier orbits are hole-like and for E<ES they are electron-like, giving opposite contributions to RH. We are abble to fit the experimental results for a wide range of hole doping, and to fit the universal curve. For us kb*T0 is simply EF-ES, where EF is the Fermi level varying with the doping.