Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

TL;DR

This study investigates how remote doping influences scattering and local field effects in a 2D electron system within a Si/SiGe quantum well, revealing that remote doping significantly impacts transport properties and local field correction estimates.

Contribution

It demonstrates that remote doping dominates scattering in the 2D electron system and shows that the Hubbard model underestimates local field corrections by about a factor of 2.

Findings

Remote doping determines the transport scattering time.

The magnetoresistance at full spin polarization is about 30%.

The Hubbard form underestimates local field corrections by a factor of 2.

Abstract

The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.