Time-dependent Currents of a Single-electron Transistor in Dissipative Environments

TL;DR

This paper theoretically investigates how dissipative environments influence time-dependent currents in single-electron transistors, deriving environment-dependent tunneling rates and analyzing their effects on tunneling and displacement currents.

Contribution

It introduces a method to derive time- and environment-dependent tunneling rates using a reduced-density operator approach for dissipative circuits.

Findings

Dissipative environments affect tunneling currents via voltage determination and particle-hole depletion.

Derived explicit expressions for tunneling and displacement currents considering dissipation.

Analyzed static and dynamic effects of environment on single-electron transistor currents.

Abstract

Currents of the single-electron transistors driven by time-dependent fields via external dissipative circuits are investigated theoretically. By expressing the external circuit in terms of driven harmonic oscillators and using the reduced-density operator method, we derive time- and environment-dependent tunneling rates in the regime of sequential tunneling and present expressions for both displacement and tunneling currents with these tunneling rates. It is found that the dissipative environments affect tunneling currents in two ways; the determination of driving voltages at tunneling junctions and the depletion of particle-hole distribution functions. Considering a simple dissipative circuit, we discuss the effects of the environment on tunneling currents in both static and time-dependent cases.