Thermoelectric properties of junctions between metal and models of strongly correlated semiconductors

TL;DR

This paper investigates the thermoelectric properties of metal-strongly correlated semiconductor junctions, highlighting how interface modifications can significantly enhance thermoelectric efficiency at low temperatures.

Contribution

It introduces a study of thermopower in metal-strongly correlated semiconductor junctions, comparing different regimes and proposing interface engineering to improve thermoelectric performance.

Findings

High ZT values achievable with interface monolayers.

Enhanced thermoelectric efficiency in correlated regimes.

Potential for low-temperature thermoelectric devices.

Abstract

We study the thermopower of a junction between a metal and a strongly correlated semiconductor. Both in the electronic ferroelectric regime and in the Kondo insulator regime the thermoelectric figures of merit, ZT, of these junctions are compared with that of the ordinary semiconductor. By inserting at the interface one or two monolayers of atoms different from the bulk, with a suitable choice of rare-earth elements very high values of ZT can be reached at low temperatures. The potential of the junction as a thermoelectric device is discussed.