Ferromagnetism in Mn doped GaAs due to substitutional-interstitial complexes
Priya Mahadevan, Alex Zunger (National Renewable Energy Lab, Golden, CO)

TL;DR
This study investigates how substitutional and interstitial Mn atoms form complexes in GaAs, revealing that such complexes can promote ferromagnetism even when holes are quenched, especially under epitaxial growth conditions.
Contribution
It demonstrates that Mn interstitials and their complexes with substitutional Mn can stabilize ferromagnetism in GaAs:Mn, expanding understanding beyond isolated Mn impurity models.
Findings
Mn substitutional sites are energetically favored under As-rich conditions.
Epitaxial growth enhances Mn solubility and cluster formation.
Mn complexes can sustain ferromagnetism despite hole quenching.
Abstract
While most calculations on the properties of the ferromagnetic semiconductor GaAs:Mn have focussed on isolated Mn substituting the Ga site (Mn), we investigate here whether alternate lattice sites are favored and what the magnetic consequences of this might be. Under As-rich (Ga-poor) conditions prevalent at growth, we find that the formation energies are lower for Mn over interstitial Mn (Mn).As the Fermi energy is shifted towards the valence band maximum via external -doping, the formation energy of Mn is reduced relative to Mn. Furthermore, under epitaxial growth conditions, the solubility of both substitutional and interstitial Mn are strongly enhanced over what is possible under bulk growth conditions. The high concentration of Mn attained under epitaxial growth of p-type material opens the possibility of Mn atoms forming small clusters. We consider…
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