Nonlinear optics of semiconductors under an intense terahertz field

TL;DR

This paper develops a theoretical framework for understanding the nonlinear optical response of semiconductors subjected to intense terahertz fields, employing Floquet states within a Feynman diagram approach.

Contribution

It introduces a nonperturbative theory using Floquet states and double-line Feynman diagrams to analyze semiconductor nonlinear optics under strong terahertz fields.

Findings

The theory captures the nonperturbative effects of intense terahertz fields.

It provides a comprehensive method for calculating nonlinear optical responses.

The approach advances understanding of semiconductor behavior in strong terahertz regimes.

Abstract

A theory for nonlinear optics of semiconductors in the presence of an intense terahertz electric field is constructed based on the double-line Feynman diagrams, in which the nonperturbative effect of the intense terahertz field is fully taken into account through using the Floquet states as propagating lines in the Feynman diagrams.