Temperature Dependence of Zero-Bias Resistances of a Single Resistance-Shunted Josephson Junction

TL;DR

This paper investigates how the zero-bias resistance of a single resistance-shunted Josephson junction varies with temperature, revealing a power-law dependence influenced by the ratio of Josephson to charging energies, using path-integral Monte Carlo calculations.

Contribution

It provides the first detailed theoretical analysis of temperature-dependent zero-bias resistance in resistance-shunted Josephson junctions considering comparable Josephson and charging energies.

Findings

Resistance behavior changes around $ ext{α}=1$

Resistance exhibits power-law temperature dependence

Results align with experimental observations

Abstract

Zero-bias resistances of a single resistance-shunted Josephson junction are calculated as a function of the temperature by means of the path-integral Monte Carlo method in case a charging energy $E_{\rm C}$ is comparable with a Josephson energy $E_{\rm J}$. The low-temperature behavior of the zero-bias resistance changes around $\alpha=R_{\rm Q}/R_{\rm S}=1$, where $R_{\rm S}$ is a shunt resistance and $R_{\rm Q}=h/(2e)^2$. The temperature dependence of the zero-bias resistance shows a power-law-like behavior whose exponent depends on $E_{\rm J}/E_{\rm C}$. These results are compared with the experiments on resistance-shunted Josephson junctions.