Group theoretical analysis of double acceptors in a magnetic field: identification of the Si:B^+ ground state

TL;DR

This paper uses group theory to analyze the magnetic field behavior of double acceptors in silicon, specifically identifying the B^+ ground state as non-degenerate, which clarifies its electronic structure.

Contribution

It provides a group theoretical analysis of the Si:B^+ ground state in a magnetic field, offering new insights into its degeneracy and electronic configuration.

Findings

The B^+ ground state is most compatible with a non-degenerate Gamma_1 state.

Group theory analysis explains the magnetic field behavior of acceptors in silicon.

Results clarify the electronic structure of boron double acceptors in silicon.

Abstract

A boron impurity in silicon binding an extra hole is known to have only one bound state at an energy of just below 2 meV. The nature of the Si:B^+ ground state is however not well established. We qualitatively analyze the behavior in a magnetic field of isolated acceptors in a tetrahedral lattice binding two holes using group theory. Applying these results, we analyze recent measurements and conclude that the ground state of B^+ is most compatible with a non-degenerate Gamma_1 state.