Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction

TL;DR

This paper introduces a Monte Carlo simulation method for 2D spin-polarized electron transport in spin FETs, incorporating spin dynamics and spin-orbit interaction effects to analyze device behavior across various temperatures.

Contribution

It presents a novel Monte Carlo approach that models spin and charge transport in spin FETs with detailed spin-orbit interaction and scattering mechanisms.

Findings

Spin polarization dynamics are captured accurately.

Device behavior varies with temperature from 77K to 300K.

The method enables self-consistent electric field calculation.

Abstract

A method for Monte Carlo simulation of 2D spin-polarized electron transport in III-V semiconductor heterojunction FETs is presented. In the simulation, the dynamics of the electrons in coordinate and momentum space is treated semiclassically. The density matrix description of the spin is incorporated in the Monte Carlo method to account for the spin polarization dynamics. The spin-orbit interaction in the spin FET leads to both coherent evolution and dephasing of the electron spin polarization. Spin-independent scattering mechanisms, including optical phonons, acoustic phonons and ionized impurities, are implemented in the simulation. The electric field is determined self-consistently from the charge distribution resulting from the electron motion. Description of the Monte Carlo scheme is given and simulation results are reported for temperatures in the range 77-300 K.