The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$

TL;DR

This paper uses Monte Carlo simulations to show that accounting for ionized impurity scattering is essential for accurately predicting Hall parameters in SiGe alloys, aligning well with experimental data.

Contribution

It introduces the importance of ionized impurity scattering in modeling SiGe and validates the approach with experimental data.

Findings

Ionized impurity scattering significantly affects Hall parameters.

Monte Carlo simulations match experimental results.

Including impurity scattering improves model accuracy.

Abstract

Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si$_{(1-x)}$Ge$_x$ is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of Joelsson et.al. (JAP, 1997).