Surface assembly and ultrafast operation of all-nanoscale resonant-tunneling transistors

TL;DR

This paper proposes a surface assembly method for all-nanoscale resonant-tunneling transistors using self-organized metallic states and resonant orbitals, predicting ultrafast switching capabilities beyond 1 THz.

Contribution

It introduces a novel surface-based assembly approach for nanotube-heterostructure transistors, simplifying fabrication and enhancing robustness compared to previous methods.

Findings

Universal transistor characteristics demonstrated.

Predicted ultrafast switching beyond 1 THz.

Limited Coulomb blockade effects in the device.

Abstract

Realization of a robust nanotube-heterostructure tunneling transistors [Solid State Comm. 116, p. 569 (2000)] requires the difficult formation [Science 293, p. 76 (2001)] of a central nanoscale barrier separating a pair of outside metallic leads. Here I suggest an alternative surface-based assembly based on self-organization of one-dimensional metallic states on oxides and trapping well-resolved resonant orbitals in a central island. I present and explain the (universal) transistor characteristics and robustness. In addition, I calculate typical the island/level-to-gate capacitance to predict ultrafast (beyond-THz) switching but also document a limited importance of Coulomb blockade effects in the (nanotube) resonant-tunneling transistors.