Modeling and simulation of polycrystalline ZnO thin-film transistors

TL;DR

This paper models and simulates the effects of grain boundaries on polycrystalline ZnO thin-film transistors, revealing how grain size and defect density influence device performance and barrier formation.

Contribution

It introduces a detailed two-dimensional simulation approach for analyzing grain boundary effects in ZnO TFTs, considering multiple boundaries and defect distributions.

Findings

Smaller grain sizes cause overlapping Schottky barriers.

Barrier height depends on defect density and gate bias.

Simulation estimates trap state density from mobility and grain size.

Abstract

Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made on ZnO TFT achieving reasonably good field effect mobilities of 1-10 cm2/Vs, but reveal insufficient device performances probably due to the presence of dense grain boundaries. We have modeled grain boundaries in ZnO thin film transistors (TFTs) and performed device simulation using a two-dimensional device simulator for understanding the grain boundary effects on the device performance. Actual polycrystalline ZnO TFT modeling is commenced with considering a single grain boundary in the middle of the TFT channel formulating with a Gaussian defect distribution localized in the grain boundary. A double Shottky barrier is formed in the grain boundary and its barrier height are analyzed as functions of defect density and gate bias. The simulation is extended to the TFTs with many grain boundaries to quantitatively analyze the potential profiles developed along the channel. One of the big contrasts of polycrystalline ZnO TFT compared with a polycrystalline Si TFT is that much smaller nanoscaled grain size induces heavy overlap of double Shottky barriers. Through the simulation, we can estimate the total trap state density localized in the grain boundaries for a polycrystalline ZnO by knowing apparent mobility and grain size in the device.