Local gating of carbon nanotubes

TL;DR

This study investigates how local electrostatic gates influence the electrical properties of carbon nanotubes, revealing distinct effects compared to global gating, through precise fabrication and transport measurements.

Contribution

It demonstrates the impact of local gating on carbon nanotubes grown by CVD, highlighting the ability to control nanotube properties with patterned electrostatic gates.

Findings

Local gates affect nanotube transport differently than backgates.

Patterned high-k dielectric enables localized electrostatic control.

Transport measurements confirm gate-specific effects.

Abstract

Local effects of multiple electrostatic gates placed beneath carbon nanotubes grown by chemical vapor deposition (CVD) are reported. Single-walled carbon nanotubes were grown by CVD from Fe catalyst islands across thin Mo "finger gates" (150 x 10nm). Prior to tube growth, several finger gates were patterned lithogrpahically and subsequently coated with a patterned high-k dielectric using low-temperature atomic layer deposition. Transport measurements demonstrate that local finger gates have a distinct effect from a global backgate.