Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells

TL;DR

This paper reports the observation of the circular photogalvanic effect in GaAs quantum wells during inter-band excitation, supported by spectral measurements and a theoretical model considering band spin splitting.

Contribution

It presents the first experimental observation of CPGE at inter-band excitation in quantum wells with a theoretical explanation including spin splitting effects.

Findings

CPGE observed in GaAs quantum wells at inter-band excitation

Spectral dependence of CPGE measured alongside polarization degree

Theoretical model accounts for conduction and valence band spin splitting

Abstract

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.