Charge shelving and bias spectroscopy for the readout of a charge-qubit on the basis of superposition states

TL;DR

This paper proposes a novel method for reading out superposition states in charge-qubits by using a third quantum dot and bias spectroscopy, combined with an adiabatic charge pumping technique for improved measurement robustness.

Contribution

It introduces a new approach involving a third dot and energy-dependent tunnelling for superposition basis readout, enhancing charge-qubit measurement fidelity.

Findings

Effective superposition state discrimination demonstrated.

Robust charge readout achieved via adiabatic charge pumping.

Enhanced coherence times compared to position state measurements.

Abstract

Charge-based qubits have been proposed as fundamental elements for quantum computers. One commonly proposed readout device is the single-electron transistor (SET). SETs can distinguish between localized charge states, but lack the sensitivity to directly distinguish superposition states, which have greatly enhanced coherence times compared with position states. We propose introducing a third dot, and exploiting energy dependent tunnelling from the qubit into this dot (bias spectroscopy) for pseudo-spin to charge conversion and superposition basis readout. We introduce an adiabatic fast passage-style charge pumping technique which enables efficient and robust readout via charge shelving, avoiding problems due to finite SET measurement time.