Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C
Y.D. Park, J.D. Lim, K.S. Suh, S.B. Shim, J.S. Lee, C.R. Abernathy,, S.J. Pearton, Y.S. Kim, Z.G. Khim, and R. G. Wilson
TL;DR
This study demonstrates carrier-mediated ferromagnetic ordering in Mn-implanted p+GaAs:C with high hole concentrations, showing magnetic properties up to 280 K and highlighting the role of Mn doping in magnetic behavior.
Contribution
It reveals ferromagnetic ordering in Mn-implanted p+GaAs:C at high carrier concentrations, advancing understanding of magnetic semiconductors.
Findings
Remanent magnetization observed up to 280 K.
Anomalies in transport measurements linked to magnetic properties.
Hall effect measurements confirm magnetic ordering.
Abstract
Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K.
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