Observation of Mott Transition in VO_2 Based Transistors

TL;DR

This paper reports the first observation of an abrupt Mott metal-insulator transition in VO_2 transistors, triggered by hole doping, revealing a discontinuous change in electronic states and inhomogeneity.

Contribution

It demonstrates the first experimental evidence of a sharp Mott transition in VO_2 induced by minimal hole doping, advancing understanding of correlated electron systems.

Findings

Abrupt MIT observed at U/U_c=1 in VO_2

Discontinuous jump in density of states on Fermi surface

Gate effect confirms hole-induced transition

Abstract

An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for the first time in VO_2, a strongly correlated material, by inducing holes of about 0.018% into the conduction band. As a result, a discontinuous jump of the density of states on the Fermi surface is observed and inhomogeneity inevitably occurs. The gate effect in fabricated transistors is clear evidence that the abrupt MIT is induced by the excitation of holes.