Spin extraction from a non-magnetic semiconductor

TL;DR

This paper presents a novel mechanism for generating spin polarization in non-magnetic semiconductors via tunneling through a modified Schottky barrier, effective at various temperatures.

Contribution

It introduces a new efficient method for spin extraction in non-magnetic semiconductors using tunneling through a specially modified Schottky barrier.

Findings

Electrons with specific spin projections are selectively extracted.

Spin density increases with current.

Spin penetration depth decreases with current.

Abstract

New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM) through a Schottky barrier modified with very thin heavily doped interfacial layer. We show that electrons with a certain spin projection are extracted from S, while electrons with the opposite spins are accumulated in S. The spin density increases and spin penetration depth decreases with current.