Atomically precise placement of single dopants in Si

TL;DR

This paper demonstrates a method for atomically precise placement of phosphorus dopants in silicon using STM lithography, enabling the creation of atomic-scale electronic devices with nanometer accuracy.

Contribution

It introduces a controlled process for incorporating single P atoms into Si (001) with ~1 nm precision using STM H-lithography, advancing atomic-scale device fabrication.

Findings

Single P atoms can be incorporated into Si (001) below H desorption temperature.

Precise placement of P atoms with ~1 nm accuracy achieved.

Nanometer-wide lines of P atoms successfully created.

Abstract

We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si (001) and show that it is possible to thermally incorporate P atoms into Si (001) below the H desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H-lithography. We demonstrate the positioning of single P atoms in Si with ~ 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.