Two-dimensional hole precession in an all-semiconductor spin field effect transistor

TL;DR

This paper provides a comprehensive theoretical analysis of a spin field-effect transistor based on holes in a quantum well, including detailed modeling of transport phenomena and spin precession effects.

Contribution

It introduces a complete theoretical framework for hole-based spin FETs, incorporating both heavy- and light-hole bands and complex interface and interference effects.

Findings

Numerical results match analytical formulas for device current.

Gate voltage effectively controls spin precession and current.

The model accurately predicts transport behavior in the proposed structure.

Abstract

We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p--doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based on an envelope-function approach for the hole bands in the various regions of the transistor, we derive the complete theory of coherent transport through the device, which includes both heavy- and light-hole subbands, proper modeling of the mode matching at interfaces, integration over injection angles, Rashba spin precession, interference effects due to multiple reflections, and gate-voltage dependences. Numerical results for the device current as a function of externally tunable parameters are in excellent agreement with approximate analytical formulae.