Field-Effect Transistors on Tetracene Single Crystals

TL;DR

This paper reports the fabrication and characterization of field-effect transistors on tetracene single crystals, achieving high mobility and demonstrating the high quality of the devices due to a gentle fabrication process.

Contribution

It introduces a fabrication method for tetracene single-crystal FETs that preserves crystal quality and achieves high room-temperature mobility.

Findings

Mobility reaches 0.4 cm^2/Vs at room temperature.

Mobility shows non-monotonous temperature dependence.

Devices exhibit sharp subthreshold slope.

Abstract

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The non-monotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality.