Gate-controllable spin-battery
Wen Long, Qing-feng Sun, Hong Guo, Jian Wang

TL;DR
This paper introduces a gate-controlled spin-battery device using double quantum dots that can generate spin currents without charge flow, promising for spintronics applications.
Contribution
The paper proposes a novel spin-battery design with gate control for spin current generation, achievable with current technology at low temperatures.
Findings
Finite DC spin-current can be generated
Spin-current delivered without charge-current
Device feasible with existing technology
Abstract
We propose a gate-controllable spin-battery for spin current. The spin-battery consists of a lateral double quantum dot under a uniform magnetic field. A finite DC spin-current is driven out of the device by controlling a set of gate voltages. Spin-current can also be delivered in the absence of charge-current. The proposed device should be realizable using present technology at low temperature.
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