A model of transport nonuniversality in thick-film resistors
C. Grimaldi, T. Maeder, P. Ryser, S. Straessler
TL;DR
This paper introduces a model explaining why thick-film resistors exhibit nonuniversal conductance exponents near the percolation transition, emphasizing microstructure and tunneling effects.
Contribution
The model links microstructure and tunneling to nonuniversal conductance exponents, providing a physical explanation for experimental observations.
Findings
Nonuniversality arises from wide distribution of tunneling distances.
Segregated microstructure influences transport properties.
Model aligns with observed conductance behavior near percolation.
Abstract
We propose a model of transport in thick-film resistors which naturally explains the observed nonuniversal values of the conductance exponent t extracted in the vicinity of the percolation transition. Essential ingredients of the model are the segregated microstructure typical of thick-film resistors and tunneling between the conducting grains. Nonuniversality sets in as consequence of wide distribution of interparticle tunneling distances.
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