Levy statistics and anomalous transport in quantum-dot arrays
D.S. Novikov, M. Drndic, L.S. Levitov, M.A. Kastner, M.V. Jarosz, M.G., Bawendi

TL;DR
This paper introduces a Levy process-based model to explain anomalous transport and memory effects in quantum-dot arrays, supported by noise measurements aligning with non-Poissonian fluctuation predictions.
Contribution
It presents a novel Levy process model for electron transport in quantum-dot arrays, explaining power law transients without requiring time-dependent system properties.
Findings
Noise measurements match Levy process predictions
Power law current transients observed in experiments
Non-Poissonian fluctuations confirmed in current noise
Abstract
A novel model of transport is proposed to explain power law current transients and memory phenomena observed in partially ordered arrays of semiconducting nanocrystals. The model describes electron transport by a stationary Levy process of transmission events and thereby requires no time dependence of system properties. The waiting time distribution with a characteristic long tail gives rise to a nonstationary response in the presence of a voltage pulse. We report on noise measurements that agree well with the predicted non-Poissonian fluctuations in current, and discuss possible mechanisms leading to this behavior.
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