Magnetic bipolar transistor
Jaroslav Fabian, Igor Zutic, and S. Das Sarma
TL;DR
This paper introduces the magnetic bipolar transistor, a device with magnetic regions or injected spin, demonstrating that its current amplification can be controlled via spin, opening new avenues for spintronic applications.
Contribution
It presents the concept and theoretical prediction that magnetic bipolar transistors can achieve tunable current amplification through spin injection.
Findings
Electrical spin injection is possible in the forward active regime.
Current amplification can be tuned by spin.
The device combines magnetic and electronic properties for potential spintronic use.
Abstract
A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin.
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