Effects of inhomogeneous broadening on reflection spectra of Bragg multiple quantum well structures with a defect
L. I. Deych, M. V. Erementchouk, A. A. Lisyansky

TL;DR
This paper investigates how inhomogeneous broadening influences the reflection spectra of Bragg multiple quantum well structures with a defect, revealing complex effects and proposing a method to measure broadening parameters from a single spectrum.
Contribution
It introduces a novel analysis of inhomogeneous broadening effects on defect-related reflection spectra and proposes a new measurement method from a single CW spectrum.
Findings
Inhomogeneous broadening causes non-trivial modifications to the reflection spectrum.
Short structures with defects show significant spectral changes useful for optoelectronic applications.
A method is proposed to measure broadening parameters from a single reflection spectrum.
Abstract
The reflection spectrum of a multiple quantum well structure with an inserted defect well is considered. The defect is characterized by the exciton frequency different from that of the host's wells. It is shown that for relatively short structures, the defect produces significant modifications of the reflection spectrum, which can be useful for optoelectronic applications. Inhomogeneous broadening is shown to affect the spectrum in a non-trivial way, which cannot be described by the standard linear dispersion theory. A method of measuring parameters of both homogeneous and inhomogeneous broadenings of the defect well from a single CW reflection spectrum is suggested.
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