Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

TL;DR

This paper reports the fabrication and characterization of a SrTiO3-based field-effect transistor with an amorphous Al2O3 gate insulator, demonstrating room-temperature operation and temperature-dependent mobility behavior.

Contribution

It introduces a novel SrTiO3 FET fabricated with sputtered Al2O3 insulator at room temperature, showing promising electrical characteristics.

Findings

FE mobility of 0.1cm2/Vs at room temperature

On-off ratio exceeds 100 at room temperature

Mobility exhibits thermal activation behavior down to 2K

Abstract

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV.