The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)

TL;DR

This study investigates how antiphase boundaries influence surface morphology during ion sputtering and solid phase epitaxy of Si(001), revealing their roles in surface roughening and conditions for achieving atomically flat surfaces.

Contribution

It identifies two types of antiphase boundaries on Si(001) and elucidates their stability and impact during ion sputtering and epitaxy processes.

Findings

AP2 antiphase boundaries contribute to surface roughening.

AP2 boundaries are stable up to 973K.

Atomically flat Si(001) surfaces are achieved at 973K with ion sputtering and epitaxy.

Abstract

The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries form on Si(001) surfaces during ion sputtering and solid phase epitaxy. One type of antiphase boundary, the AP2 antiphase boundary, contributes to the surface roughening. AP2 antiphase boundaries are stable up to 973K, and ion sputtering and solid phase epitaxy performed at 973K result in atomically flat Si(001) surfaces.