Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

TL;DR

This paper investigates how microwave radiation affects the electrical resistance and V-I characteristics of high mobility 2D electron systems in GaAs/AlGaAs heterostructures, revealing non-linear to linear V-I transition and the influence of radiation intensity.

Contribution

It provides new experimental insights into the voltage-current behavior and resistance dependence on microwave power in radiation-induced zero-resistance states.

Findings

Microwave irradiation linearizes the V-I curve in the resistance minima.

Resistance decreases with increasing microwave intensity.

V-I characteristics differ from expectations without irradiation.

Abstract

High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage - current characteristics, and the resistance at the minima vs. the microwave power. The findings indicate that a non-linear V-I curve in the absence of microwave excitation becomes linearized under irradiation, unlike expectations, and they suggest a similarity between the roles of the radiation intensity and the inverse temperature.