Probing hole-induced ferromagnetic exchange in magnetic semiconductors by inelastic neutron scattering

TL;DR

This study investigates how hole doping influences the magnetic exchange interactions in ZnMnTe semiconductors using inelastic neutron scattering, confirming theoretical models even in insulating states.

Contribution

It provides experimental evidence of hole-induced ferromagnetic exchange in magnetic semiconductors, validating the Zener/RKKY model predictions across the metal-insulator transition.

Findings

Hole doping alters nearest neighbor exchange energy.

Experimental results agree with Zener/RKKY model predictions.

Ferromagnetic exchange persists even in insulating regime.

Abstract

The effect of hole doping on the exchange coupling of the nearest neighbor (NN) Mn pairs in Zn$_{1-x}$Mn$_x$Te is probed by inelastic neutron scattering. The difference in the NN exchange energy $\Delta J_1$ in the presence and in the absence of the holes is determined. The obtained value of $\Delta J_1$ is in good agreement with the predictions of the Zener/RKKY model, even on the insulator side of the metal-insulator transition.