Local Manipulation of Nuclear Spin in a Semiconductor Quantum Well

TL;DR

This paper demonstrates precise control of nuclear spin polarization profiles in a semiconductor quantum well using gate voltages, enabling localized manipulation of nuclear spins at nanometer scales.

Contribution

It introduces a method to locally manipulate nuclear spins in a quantum well via voltage-controlled electron and hole wave functions, advancing spin control techniques.

Findings

Voltage control creates nanometer-scale polarized nuclear sheets.

RF voltages induce isotope-specific nuclear resonances.

Depolarization depends on electron-hole separation, indicating localized mechanisms.

Abstract

The shaping of nuclear spin polarization profiles and the induction of nuclear resonances are demonstrated within a parabolic quantum well using an externally applied gate voltage. Voltage control of the electron and hole wave functions results in nanometer-scale sheets of polarized nuclei positioned along the growth direction of the well. RF voltages across the gates induce resonant spin transitions of selected isotopes. This depolarizing effect depends strongly on the separation of electrons and holes, suggesting that a highly localized mechanism accounts for the observed behavior.