Imaging the charge transport in arrays of CdSe nanocrystals

TL;DR

This paper introduces a new imaging technique to measure electron diffusion in CdSe nanocrystal films, enabling the study of charge transport in highly resistive or low-mobility materials at room temperature.

Contribution

The paper presents a novel imaging method for measuring charge transport properties in nanocrystal films, expanding capabilities for analyzing highly resistive materials.

Findings

Successfully measured electron diffusion coefficients in CdSe nanocrystal films.

Demonstrated the method's effectiveness in high-resistance or low-diffusion scenarios.

Provided insights into charge transport mechanisms in nanocrystal arrays.

Abstract

A novel method to image charge is used to measure the diffusion coefficient of electrons in films of CdSe nanocrystals at room temperature. This method makes possible the study of charge transport in films exhibiting high resistances or very small diffusion coefficients.