Molecular rectifying diodes from self-assembly on silicon
Stephane Lenfant, Christophe Krzeminski, Christophe Delerue, Guy, Allan, Dominique Vuillaume

TL;DR
This paper reports the creation of molecular rectifying diodes using self-assembly on silicon, achieving significant rectification ratios and demonstrating potential for integration with silicon nanotechnologies.
Contribution
It introduces a simple, self-assembled molecular diode structure compatible with silicon technology, with experimental validation and theoretical understanding of rectification mechanisms.
Findings
Rectification ratios up to 37 achieved.
Rectification occurs via resonance through the HOMO of the p-group.
Device fabrication compatible with silicon nanotechnologies.
Abstract
We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3V and -0.9V. We show that rectification occurs from resonance through the highest occupied molecular orbital of the p-group in good agreement with our calculations and internal photoemission spectroscopy. This approach allows us to fabricate molecular rectifying diodes compatible with silicon nanotechnologies for future hybrid circuitries.
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