Residual Resistance in a 2DES: A Phenomenological Approach
A. F. Volkov, V. V. Pavlovskii

TL;DR
This paper presents a phenomenological model explaining residual negative conductance and resistance in a 2D electron system under magnetic fields, highlighting their exponential decay with sample size.
Contribution
It introduces a simple phenomenological framework for understanding negative conductance domains and residual resistance in 2DES under magnetic fields.
Findings
Residual conductance and resistance are negative.
They decrease exponentially with sample size.
Domains of electric field and current form due to instability.
Abstract
We consider a simple phenomenological model of a semiconductor with absolute negative conductance in a magnetic field. We find the form of the domains of the electric field and current which arise as a result of an instability of a uniform state. We show that in both Corbino disc and Hall bar samples the residual conductance and resistance are negative and exponentially small; they decrease exponentially with increasing length L_{x,y}.
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Taxonomy
TopicsIntegrated Circuits and Semiconductor Failure Analysis
