On possible spin injection at non-ideal Schottky contacts

TL;DR

This paper investigates spin injection at non-ideal Schottky contacts, demonstrating that tailored depletion regions and specific tunneling mechanisms can enable significant spin injection in metal-semiconductor structures.

Contribution

It introduces a simplified model for interface resistance and shows that ionized cluster beam deposited non-ideal Schottky structures can achieve notable spin injection.

Findings

Depletion region can be tailored to enhance spin injection.

A simplified tunneling model describes interface resistance.

Ionized cluster beam deposition enables effective spin injection.

Abstract

The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is considered, and it is shown that the depletion region of the semiconductor can be tailored to include a suitably heavily doped region near the interface. The tunneling is described within a simplified model in which the expression for the interface resistance of the metal-disordered layer-semiconductor structure is obtained. It is argued that in the case of ionized cluster beam deposited non-ideal Schottky structure a significant spin injection is achieved.