Inelastic light scattering and the excited states of many-electron quantum dots
Alain Delgado, Augusto Gonzalez

TL;DR
This paper presents a comprehensive theoretical calculation of resonant inelastic light scattering in large quantum dots, considering complex effects like valence-band mixing and interference, and compares results with experimental data.
Contribution
It introduces a consistent calculation method for Raman scattering in large quantum dots that accounts for multiple complex physical effects.
Findings
Raman peaks correlate with multipole strengths and energy level density.
Theoretical results show qualitative agreement with experimental observations.
The model enhances understanding of electron excitations in quantum dots.
Abstract
A consistent calculation of resonant inelastic (Raman) scattering amplitudes for relatively large quantum dots, which takes account of valence-band mixing, discrete character of the spectrum in intermediate and final states, and interference effects, is presented. Raman peaks in charge and spin channels are compared with multipole strengths and with the density of energy levels in final states. A qualitative comparison with the available experimental results is given.
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