Pulsed Laser Deposition of LaAlO3-Ba0.5Sr0.5TiO3 Thin Films for Tunable Device Applications
L. B. Kong, L. Yan, K. B. Chong, C. Y. Tan, L. F. Chen, C. K. Ong

TL;DR
This study investigates pulsed laser deposition of LaAlO3-Ba0.5Sr0.5TiO3 thin films with varying compositions, analyzing their microstructure and dielectric properties for potential tunable device applications.
Contribution
It introduces a method to control the composition and dielectric properties of LAO-BST thin films via pulsed laser deposition, with detailed characterization of their microstructure and dielectric tunability.
Findings
Lattice constant decreases with increasing LAO content.
Dielectric constant decreases as LAO content increases.
Maximum dielectric tunability observed at different frequencies.
Abstract
LaAlO3-Ba0.5Sr0.5TiO3 (LAO-BST) thin films, with different LAO contents, were deposited on Pt/Ti/SiO2/Si and (100) LaAlO3 substrate, via a pulsed laser deposition (PLD). Phase composition and microstructure of the LAO-BST thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The LAO-BST thin films were solid solution of LAO nd BST, with lattice constant decreasing with increasing LAO content. The composition of (LAO)x(BST)1-x, estimated from the lattice constant of the thin films derived from the targets of 1/6, 2/6 and 3/6 LAO, was 0.143, 0.278, 0.476, respectively. The grain size of the thin films decreased as a result of the incorporation of LAO into BST. Dielectric properties of the LAO-BST thin films on Pt/Ti/SiO2/Si were measured at low frequency (100 kHz), while those on LaAlO3 substrate were characterized at high frequency (~7.9 GHz).…
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Semiconductor materials and devices · Ferroelectric and Piezoelectric Materials
