High Magnetic Field Sensor Using LaSb2

TL;DR

This paper investigates the magnetotransport properties of LaSb2 crystals under high magnetic fields, highlighting its potential as a magnetic field sensor due to its large, linear magnetoresistance and stable behavior at low temperatures.

Contribution

It provides detailed measurements of LaSb2's magnetoresistance up to 45 T and discusses its potential application in magnetic field sensing technology.

Findings

LaSb2 exhibits a 100-fold linear magnetoresistance up to 45 T.

Magnetoresistance becomes temperature independent below 10 K.

High field carrier density is approximately 3x10^20 cm^-3.

Abstract

The magnetotransport properties of single crystals of the highly anisotropic layered metal LaSb2 are reported in magnetic fields up to 45 T with fields oriented both parallel and perpendicular to the layers. Below 10 K the perpendicular magnetoresistance of LaSb2} becomes temperature independent and is characterized by a 100-fold linear increase in resistance between 0 and 45 T with no evidence of quantum oscillations down to 50 mK. The Hall resistivity is hole-like and gives a high field carrier density of n ~ 3x10^20 cm^-3. The feasibility of using LaSb2 for magnetic field sensors is discussed.