Quasi-ballistic transport in HgTe quantum-well nanostructures

TL;DR

This paper investigates the transport properties of HgTe quantum-well nanostructures, demonstrating quasi-ballistic behavior in micrometer-scale devices through experimental measurements and Monte Carlo simulations.

Contribution

It provides the first evidence of quasi-ballistic transport in HgTe quantum-well nanostructures with sub-micrometer dimensions.

Findings

Transport dominated by ballistic effects

Fabrication of devices with 0.45 μm features

Monte Carlo simulations agree with experimental data

Abstract

The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum-wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic dimensions down to 0.45 $\mu$m. Evidence that the transport properties are dominated by ballistic effects in these structures is presented. Monte Carlo simulations of semi-classical electron trajectories show good agreement with the experiment.