Ultrafast Photoinduced Softening in a III-V Ferromagnetic Semiconductor for Non-thermal Magneto-Optical Recording
G. A. Khodaparast, J. Wang, J. Kono, A. Oiwa, H. Munekata

TL;DR
This study demonstrates that ultrafast photoexcitation can transiently soften the coercivity of a ferromagnetic semiconductor, enabling nonthermal magnetization control on picosecond timescales.
Contribution
It introduces a nonthermal, ultrafast method to manipulate magnetization in a ferromagnetic semiconductor using transient carrier-induced effects.
Findings
Transient coercivity decrease lasts about 2 ps
Carrier recombination restores original coercivity
Proposes carrier-enhanced exchange as the softening mechanism
Abstract
Through time-resolved two-color magneto-optical Kerr spectroscopy we have demonstrated that photogenerated transient carriers decrease the coercivity of ferromagnetic InMnAs at low temperatures. This transient ``softening'' persists only during the carrier lifetime ( 2 ps) and returns to its original value as soon as the carriers recombine to disappear. We discuss the origin of this unusual phenomenon in terms of carrier-enhanced ferromagnetic exchange interactions between Mn ions and propose an entirely nonthermal scheme for magnetization reversal.
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Taxonomy
TopicsNear-Field Optical Microscopy · Integrated Circuits and Semiconductor Failure Analysis · Optical Coatings and Gratings
