The spin-torque transistor

TL;DR

This paper proposes a magnetoelectronic thin-film transistor that utilizes spin-torque effects to achieve negative differential resistance and gain, potentially enabling room-temperature spintronic devices.

Contribution

It introduces a novel spin-torque transistor design that modulates current via magnetization control, demonstrating a new approach in spintronics.

Findings

Device can operate at room temperature

Requires ferromagnetic materials with near-unity polarization

Displays negative differential resistance and gain

Abstract

A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin-valve. The device can operate at room temperature, but in order to be useful, ferromagnetic materials with polarizations close to unity are required.