Effect of symmetry of the electron states of HTSC on the current-voltage characteristics of SIS junctions

TL;DR

This paper models the current-voltage characteristics of SIS junctions in high-temperature superconductors, revealing how electron state symmetry influences the shape and features of the IV curves, and explaining experimental observations.

Contribution

It introduces a multiband anisotropic model for HTSCs that explains IV characteristics and the s-like behavior observed in experiments, advancing understanding beyond single-band models.

Findings

IV characteristics depend on model parameters

Explains s-like IV behavior in BSCCO superconductors

Analyzes band arrangement effects on peak asymmetry

Abstract

The current-voltage $IV$ characteristics of $SIS$ junctions are calculated in the framework of a multiband model with an anisotropic effective order parameter of HTSC. The results of calculations show that the shape of $IV$ characteristic and the density of electron states changes significantly depending on the parameters of the model. A theoretical explanation is proposed for the experimentally observed $s$-like behavior of the $IV$ characteristics of $SIN$ and $SIS$ junctions with BSCCO-type superconductors. The dependence of the superconducting peaks asymmetry on the mutual arrangement of the bands is analyzed. The difference between the obtained results and the results of single-band models with the $s$ and $d$ symmetries of the order parameter is discussed.