Realistic Semiconductor Heterostructures design using Inverse Scattering

TL;DR

This paper presents a method for designing realistic semiconductor heterostructures by applying inverse scattering techniques to optimize electronic filters across various densities and temperatures, including room temperature.

Contribution

It introduces discretization methods for the potential that preserve all properties, enabling accurate modeling of self-consistent potentials in semiconductor heterostructures.

Findings

Effective inverse scattering-based design of electronic filters.

Discretization techniques that maintain potential properties.

Applicability across a range of densities and temperatures.

Abstract

We discuss the construction of optimized electronic filters using inverse scattering methods. We study a wide range of densities and temperatures, room temperature included. Discretization methods of the potential (including the self-consistent potential of the conduction electrons) are worked out that retain all its properties.