Effect of bulk inversion asymmetry on the Datta-Das transistor
A. {\L}usakowski, J. Wr\'obel, T. Dietl
TL;DR
This paper models the Datta-Das spin transistor considering bulk inversion asymmetry, revealing its impact on conductance and identifying optimal channel orientations for GaAs and InAs devices.
Contribution
It introduces a model that incorporates bulk inversion asymmetry into the Datta-Das transistor analysis, extending previous Rashba-only models.
Findings
Conductance depends significantly on crystallographic orientation.
Optimal channel directions for observing the effect are identified.
Bulk inversion asymmetry influences device performance.
Abstract
A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs and InAs-based devices.
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