Switching a spin-valve back and forth by current-induced domain wall motion

TL;DR

This paper investigates current-induced domain wall motion in a spin-valve structure, demonstrating reversible back-and-forth movement at low current densities and the influence of small applied magnetic fields.

Contribution

It presents experimental evidence of reversible domain wall switching driven by current in a spin-valve, highlighting low current densities and field effects.

Findings

Reversible domain wall motion achieved with current densities around 10^6 A/cm^2.

Opposite currents induce displacement in opposite directions.

Small applied magnetic fields influence the domain wall behavior.

Abstract

We have studied the current-induced displacement of a domain wall (DW) in the permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small applied field. The displacement is in opposite direction for opposite dc currents, and the current density required to move DW is only of the order of 10^6 A/cm^2. For H = 3 Oe, a back and forth DW motion between two stable positions is observed. We also discuss the effect of an applied field on the DW motion.