High-finesse optical quantum gates for electron spins in artificial molecules

TL;DR

This paper proposes using doped semiconductor double-quantum-dot molecules as qubits, enabling high-finesse quantum gates through spin-orbital mapping and stimulated Raman adiabatic passage, leveraging long decoherence times.

Contribution

It introduces a novel approach for quantum gates in semiconductor molecules by exploiting spin-orbital mapping and adiabatic passage techniques.

Findings

Potential for high-finesse quantum gates demonstrated

Long decoherence times of electron spins utilized

Flexible molecular structure enables advanced quantum control

Abstract

A doped semiconductor double-quantum-dot molecule is proposed as a qubit realization. The quantum information is encoded in the electron spin, thus benefiting from the long relevant decoherence times; the enhanced flexibility of the molecular structure allows to map the spin degrees of freedom onto the orbital ones and vice versa, and opens the possibility for high-finesse (conditional and unconditional) quantum gates by means of stimulated Raman adiabatic passage.