Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields

TL;DR

This paper provides a theoretical analysis of how intense terahertz laser fields affect the energy states of hydrogen-like impurities in semiconductors, focusing on the dependence of binding energies on laser parameters.

Contribution

It introduces a detailed theoretical model to study the impact of intense THz radiation on impurity energy states in semiconductors, highlighting the dependence on laser intensity and frequency.

Findings

Binding energies vary with THz laser intensity and frequency.

Theoretical predictions of energy state shifts under intense THz fields.

Insights into controlling impurity states with laser parameters.

Abstract

A detailed theoretical study is presented for the influence of linearly polarised intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for 1s and 2p states on intensity and frequency of the THz radiation has been examined.